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ISL73096EHVF +BOM

Designed for extreme reliability in radiation-intensive environments, this NPN/PNP transistor array withstands harsh condition

Manufacturer:

Renesas Electronics
Mfr.Part #:

ISL73096EHVF
Datasheet:

ISL73096EHVF Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN, PNP
Configuration:

Penta

ISL73096EHVF General Description

With the ISL73096EHVF, ISL73127EH, and ISL73128EH, engineers can count on reliable performance in high radiation environments, thanks to the rigorous testing and fabrication processes employed by Intersil. The integrated NPN and PNP transistors offer a high gain-bandwidth product and low noise figure, making them well-suited for high frequency applications such as amplifiers and mixers. The monolithic construction ensures close electrical and thermal matching, further enhancing the performance and reliability of these transistor arrays

Key Features

Robust radiation resistance
Rapid thermal shutdown protection
Fault-tolerant design for enhanced reliability

Specifications

Product Category	Bipolar Transistors - BJT	Shipping Restrictions	This product may require additional documentation to export from the United States.
Mounting Style	SMD/SMT	Transistor Polarity	NPN, PNP
Configuration	Penta	Collector- Base Voltage VCBO	12 V, 10 V
Emitter- Base Voltage VEBO	5.5 V, 4.5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	11.3 mA	Pd - Power Dissipation	1.25 W
Gain Bandwidth Product fT	5.5 GHz, 8 GHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	Series	ISL73096
DC Collector/Base Gain hfe Min	20, 40	Height	0 mm
Length	10.4 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Technology	Si	Width	6.9 mm