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Very High Voltage IGBTs - Product IXBF32N300
TO-247Manufacturer:
Mfr.Part #:
IXBF32N300
Datasheet:
Series:
BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):
3000 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
250 A
EDA/CAD Models:
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With the introduction of BiMOSFETs, a new era of power semiconductor technology has dawned, bringing together the unique advantages of MOSFETs and IGBTs in a single device. The use of non-epitaxial construction and advanced fabrication processes has enabled BiMOSFETs to excel in high voltage applications, setting new benchmarks for performance and reliability. One of the key features that sets BiMOSFETs apart is their suitability for parallel operation, owing to the favorable voltage temperature coefficients of their saturation voltage and intrinsic diode forward voltage drop. Moreover, the presence of an intrinsic body diode in BiMOSFETs serves as a protective barrier during device turn-off, diverting inductive load currents and preventing voltage transients that could potentially damage the device. This innovative design not only enhances the robustness of BiMOSFETs but also simplifies their usage in a wide range of power electronics applications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 3000 V |
Current - Collector (Ic) (Max) | 40 A | Current - Collector Pulsed (Icm) | 250 A |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 32A | Power - Max | 160 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 142 nC | Td (on/off) @ 25°C | - |
Test Condition | - | Reverse Recovery Time (trr) | 1.5 µs |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBF32 |
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