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IXBF55N300 +BOM

IGBT transistors - High voltage and high amplification

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXBF55N300
Datasheet:

IXBF55N300 Datasheet (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

3000 V
Current - Collector (Ic) (Max):

86 A
Current - Collector Pulsed (Icm):

600 A
EDA/CAD Models:

Request Free CAD Models for IXBF55N300

IXBF55N300 General Description

By harnessing the unique strengths of MOSFETs and IGBTs, the BiMOSFET IXBF55N300 delivers exceptional performance and reliability in high voltage settings. The non-epitaxial construction and state-of-the-art fabrication processes ensure that these devices meet the stringent demands of modern applications. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode make these BiMOSFETs well-suited for parallel operation, enhancing overall efficiency and performance

Key Features

Increased power density
Lower standby current
Higher overall performance

Application

Switched-mode power
Laser generator tech
Pulser circuitry

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	BIMOSFET™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	86 A	Current - Collector Pulsed (Icm)	600 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 55A	Power - Max	357 W
Switching Energy	-	Input Type	Standard
Gate Charge	335 nC	Td (on/off) @ 25°C	-
Test Condition	-	Reverse Recovery Time (trr)	1.9 µs
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBF55	Product Category:	IGBT Transistors
Technology:	Si	Mounting Style:	Through Hole
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	3 kV
Collector-Emitter Saturation Voltage:	2.7 V	Maximum Gate Emitter Voltage:	- 25 V, + 25 V
Continuous Collector Current at 25 C:	86 A	Pd - Power Dissipation:	357 W
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage	Packaging:	Tube
Gate-Emitter Leakage Current:	+/- 200 nA	Product Type:	IGBT Transistors
Factory Pack Quantity:	25	Subcategory:	IGBTs
Tradename:	BIMOSFET	Unit Weight:	0.176370 oz