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See Technical Specifications

IXBH12N300 +BOM

IXBH12N300 is a high-power IGBT chip for industrial applications

Manufacturer:

IXYS
Mfr.Part #:

IXBH12N300
Datasheet:

IXBH12N300 Datasheet (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

3000 V
Current - Collector (Ic) (Max):

30 A
Current - Collector Pulsed (Icm):

100 A
EDA/CAD Models:

Request Free CAD Models for IXBH12N300

IXBH12N300 General Description

One key feature of the IXBH12N300 BiMOSFET is its ability to be used in parallel operations, thanks to the positive voltage temperature coefficient of its saturation voltage and forward voltage drop of its intrinsic diode. This unique characteristic makes it an ideal choice for demanding applications that require reliable and efficient power management

Key Features

Efficient heat dissipation
Low noise operation
Rapid transient response
Compact footprint

Application

Advanced power solutions
UPS for critical systems
X-ray generation

Specifications

Series	BIMOSFET™	Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	30 A	Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 12A	Power - Max	160 W
Input Type	Standard	Gate Charge	62 nC
Reverse Recovery Time (trr)	1.4 µs	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	IXBH12