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See Technical Specifications

IXBH40N160 +BOM

Channel 1600V 33A 350W TO-247AD

Manufacturer:

Littelfuse
Mfr.Part #:

IXBH40N160
Datasheet:

IXBH40N160 Datasheet (PDF)
VCES - Collector-Emitter Voltage (V):

1600
Collector Current @ 25 ℃ (A):

33
VCE(sat) - Collector-Emitter Saturation Voltage (V):

6.2
Configuration:

Copack (FRED)
EDA/CAD Models:

Request Free CAD Models for IXBH40N160

IXBH40N160 General Description

The IXBH40N160 is a revolutionary product in the world of BiMOSFETs, offering a unique combination of MOSFET and IGBT capabilities. Designed with a non-epitaxial construction and utilizing cutting-edge fabrication processes, these high voltage devices have set a new standard for performance and reliability. One of the key advantages of the IXBH40N160 is its ability to support parallel operation, thanks to the positive voltage temperature coefficient of its saturation voltage and intrinsic diode forward voltage drop. This intrinsic body diode also serves as a protection diode during device turn-off, diverting inductive load current and preventing harmful voltage spikes

Key Features

High-power switching for demanding loads
Silicon-carbide construction for robustness
Fully enclosed package for increased safety
Low leakage current for minimized interference
Ultra-wide frequency range for versatility
Compliant to international standards for interoperability

Application

Robust power components
Smart grid applications
Compact power solutions

Specifications

Status	Not for New Designs	VCES - Collector-Emitter Voltage (V)	1600
Collector Current @ 25 ℃ (A)	33	VCE(sat) - Collector-Emitter Saturation Voltage (V)	6.2
Configuration	Copack (FRED)	Fall Time [Resistive Load] (ns)	40
Thermal resistance [junction-case] (K/W)	0.35	Collector Current @ 90 ℃ (A)	20
Driving Voltages (V)	15