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See Technical Specifications

IXBH5N160G +BOM

N-Channel 1600V 5.7A

Manufacturer:

IXYS
Mfr.Part #:

IXBH5N160G
Datasheet:

IXBH5N160G Datasheet (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

1600 V
Current - Collector (Ic) (Max):

5.7 A
Vce(on) (Max) @ Vge, Ic:

7.2V @ 15V, 3A
EDA/CAD Models:

Request Free CAD Models for IXBH5N160G

IXBH5N160G General Description

The IXBH5N160G BiMOSFET is a cutting-edge device that combines the best features of MOSFETs and IGBTs. By utilizing non-epitaxial construction and innovative fabrication methods, these high voltage devices have proven to be reliable and efficient in various applications. One notable advantage of BiMOSFETs is their ability to operate in parallel, thanks to the favorable voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode. This unique feature allows for enhanced performance and increased protection during operation

Key Features

Maintenance-free operation guaranteed
Low power consumption for reduced costs
Silicon-based design for high reliability

Application

Aviation technology
Military applications
Space exploration

Specifications

Series	BIMOSFET™	Voltage - Collector Emitter Breakdown (Max)	1600 V
Current - Collector (Ic) (Max)	5.7 A	Vce(on) (Max) @ Vge, Ic	7.2V @ 15V, 3A
Power - Max	68 W	Input Type	Standard
Gate Charge	26 nC	Test Condition	960V, 3A, 47Ohm, 10V
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBH5N160