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See Technical Specifications

IXBN75N170A +BOM

IGBT Module Single 1700 V 75 A 625 W Chassis Mount SOT-227B

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXBN75N170A
Datasheet:

IXBN75N170A Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Models:

Request Free CAD Models for IXBN75N170A

IXBN75N170A General Description

The IXBN75N170A BiMOSFET exemplifies the innovative approach taken by modern semiconductor technology to address the demands of high voltage applications. By incorporating the best features of MOSFETs and IGBTs, BiMOSFETs have achieved a level of performance and versatility that is truly exceptional. These devices shine in parallel operation scenarios, thanks to their unique characteristics such as the positive voltage temperature coefficient of saturation voltage and forward voltage drop. The intrinsic body diode, a key feature of BiMOSFETs, acts as a vital protection mechanism during device turn-off, effectively diverting inductive load currents and preventing harmful voltage spikes. With a focus on non-epitaxial construction and cutting-edge fabrication processes, the IXBN75N170A represents a new standard in high voltage device technology

Key Features

Simplified circuit design
Reduced complexity
Increased efficiency

Application

Industrial power systems
High voltage inverters
Electrical discharge machines

Specifications

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	SMD/SMT	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV	Collector-Emitter Saturation Voltage:	4.95 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V	Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	625 W	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Series:	IXBN75N170
Packaging:	Tube	Continuous Collector Current:	75 A
Continuous Collector Current Ic Max:	350 A	Gate-Emitter Leakage Current:	100 nA
Height:	9.6 mm	Length:	38.23 mm
Operating Temperature Range:	- 55 C to + 150 C	Product Type:	IGBT Transistors
Factory Pack Quantity:	10	Subcategory:	IGBTs
Tradename:	BIMOSFET	Width:	25.42 mm
Unit Weight:	1.058219 oz