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See Technical Specifications

IXBX50N360HV +BOM

ROHS 660W TO-247P IGBTs 125A 3.6kV

Manufacturer:

IXYS
Mfr.Part #:

IXBX50N360HV
Datasheet:

IXBX50N360HV Datasheet (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

3600 V
Current - Collector (Ic) (Max):

125 A
Current - Collector Pulsed (Icm):

420 A
EDA/CAD Models:

Request Free CAD Models for IXBX50N360HV

IXBX50N360HV General Description

The unique design of the IXBX50N360HV BiMOSFETs allows for seamless integration in complex electronic setups, offering a range of benefits such as low saturation voltage and efficient forward voltage drop. These features enable smooth parallel operation and enhance the overall performance of the system. The innovative fabrication processes deployed in the construction of these devices have further solidified their reputation as cutting-edge components in the industry

Key Features

Improved thermal performance
Reduced EMI/RFI
Enhanced safety features

Application

Power supply applications
X-ray generator circuits
Capacitor discharge systems

Specifications

Series	BIMOSFET™	Voltage - Collector Emitter Breakdown (Max)	3600 V
Current - Collector (Ic) (Max)	125 A	Current - Collector Pulsed (Icm)	420 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 50A	Power - Max	660 W
Input Type	Standard	Gate Charge	210 nC
Td (on/off) @ 25°C	46ns/205ns	Test Condition	960V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)	1.7 µs	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	IXBX50