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See Technical Specifications

IXDR30N120 +BOM

Trans IGBT Chip N-CH 1200V 50A 200W 3-Pin(3+Tab) ISOPLUS 247

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXDR30N120
Datasheet:

IXDR30N120 Datasheet (PDF)
IGBT Type:

NPT
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

50 A
Current - Collector Pulsed (Icm):

60 A

IXDR30N120 General Description

Meet your power needs with the IXDR30N120 IGBT transistor from IXYS Semiconductor, a reliable component designed for a DC collector current of 50A and a collector-emitter saturation voltage of 2.4V. With a power dissipation capability of 200W and a collector-emitter voltage rating of 1.2Kv, this transistor offers superior performance in a compact Isoplus-247 package with 3 pins for easy installation. Its RoHS compliance guarantees that it adheres to global environmental standards, making it a responsible choice for environmentally-conscious projects. Trust IXYS Semiconductor for top-of-the-line components like the IXDR30N120 that deliver exceptional quality and performance in every application

Key Features

NPT IGBT technology
Low saturation voltage
Low switching losses
Square RBSOA, no latch up
High short circuit capability
Positive temperature coefficient for easy paralleling
MOS input, voltage controlled
Optional ultra fast diode
International standard packages

Application

AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode power supplies

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	NPT	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A	Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A	Power - Max	200 W
Switching Energy	4.6mJ (on), 3.4mJ (off)	Input Type	Standard
Gate Charge	120 nC	Td (on/off) @ 25°C	-
Test Condition	600V, 30A, 47Ohm, 15V	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	IXDR30
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.4 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	50 A
Pd - Power Dissipation	200 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	50 A
Continuous Collector Current Ic Max	60 A	Gate-Emitter Leakage Current	500 nA
Height	21.34 mm	Length	16.13 mm
Operating Temperature Range	- 55 C to + 150 C	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Tradename	ISOPLUS	Width	5.21 mm
Unit Weight	0.186952 oz