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IXFA22N65X2 TO-263-3,D2PAK(2Leads+Tab),TO-263AB

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See Technical Specifications

IXFA22N65X2 +BOM

N-Channel 650 V 22A (Tc) 390W (Tc) Surface Mount TO-263HV

Manufacturer:

IXYS
Mfr.Part #:

IXFA22N65X2
Datasheet:

IXFA22N65X2 Datasheet (PDF)
Series:

HiPerFET™, Ultra X2
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Models:

Request Free CAD Models for IXFA22N65X2

Email: [email protected]

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Tel: +852 95804164

IXFA22N65X2 General Description

Engineered with precision and expertise, product IXFA22N65X2 represents the pinnacle of semiconductor design. Its advanced features and exceptional capabilities make it a valuable asset for engineers and technicians looking to optimize their power systems. Embrace the future of power electronics with this groundbreaking device

Key Features

Fast switching time
Low leakage current
Avalanche rated
High surge immunity

Application

Compact EV chargers
Precision motor control
High-performance PFC circuits

Specifications

Series	HiPerFET™, Ultra X2	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 11A, 10V	Vgs(th) (Max) @ Id	5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2310 pF @ 25 V	Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IXFA22