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See Technical Specifications

IXFH4N100Q +BOM

4 Amps MOSFET with 1000V and 2.8 Rds

Manufacturer:

Littelfuse
Mfr.Part #:

IXFH4N100Q
Datasheet:

IXFH4N100Q Datasheet (PDF)
Drain-Source Voltage (V):

1000
Maximum On-Resistance @ 25 ℃ (Ohm):

3
Continuous Drain Current @ 25 ℃ (A):

4
Gate Charge (nC):

39
EDA/CAD Models:

Request Free CAD Models for IXFH4N100Q

IXFH4N100Q General Description

In the realm of Power MOSFETs, the IXFH4N100Q stands out as a popular choice among professionals in the industry. Its Q-Class series designation signifies its superior quality and performance, making it a go-to option for applications requiring both hard switching and resonant mode capabilities. With its excellent ruggedness and low gate charge, this Power MOSFET is designed to meet the needs of modern industrial settings, providing a reliable and efficient solution for a wide range of applications

Key Features

Thermal shutdown protection for safe operation
Improved electromagnetic interference immunity
Compact and lead-free package design

Application

Robust power management
Integrated circuit protection
Long-lasting durability

Specifications

Drain-Source Voltage (V)	1000	Maximum On-Resistance @ 25 ℃ (Ohm)	3
Continuous Drain Current @ 25 ℃ (A)	4	Gate Charge (nC)	39
Input Capacitance, CISS (pF)	1050	Thermal resistance [junction-case] (K/W)	0.8
Configuration	Single	Power Dissipation (W)	156
Maximum Reverse Recovery (ns)	250	Sample Request	No