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See Technical Specifications

IXFN26N90 +BOM

IXFN26N90 SOT-227B MOSFETs ROHS

Manufacturer:

Littelfuse
Mfr.Part #:

IXFN26N90
Datasheet:

IXFN26N90 Datasheet (PDF)
Drain-Source Voltage (V):

900
Maximum On-Resistance @ 25 ℃ (Ohm):

0.3
Continuous Drain Current @ 25 ℃ (A):

26
Gate Charge (nC):

240
EDA/CAD Models:

Request Free CAD Models for IXFN26N90

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IXFN26N90 General Description

The N-Channel HiPerFET™ Standard series stands out in the realm of Power MOSFETs, offering top-notch performance for demanding applications. Whether you need to handle hard switching tasks or operate in resonant mode, these MOSFETs deliver low gate charge and superior ruggedness. The fast intrinsic diode ensures quick response times, while the availability of isolated package options adds to their versatility. Designed to meet industrial standards, the HiPerFET™ Standard series is a reliable choice for engineers looking to optimize power efficiency in their projects

Key Features

High-Speed Switching
Rapid Charging Capabilities
Low Voltage Drop-Off

Application

Improved energy efficiency
Enhanced power management
Versatile applications

Specifications

Drain-Source Voltage (V)	900	Maximum On-Resistance @ 25 ℃ (Ohm)	0.3
Continuous Drain Current @ 25 ℃ (A)	26	Gate Charge (nC)	240
Input Capacitance, CISS (pF)	8700	Thermal resistance [junction-case] (K/W)	0.21
Configuration	Single	Power Dissipation (W)	600
Maximum Reverse Recovery (ns)	250	Sample Request	No