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1-Element N-Channel FET, 75A I(D), 300V
TO-247-3Manufacturer:
Mfr.Part #:
IXFR90N30
Datasheet:
Drain-Source Voltage (V):
300
Maximum On-Resistance @ 25 ℃ (Ohm):
0.036
Continuous Drain Current @ 25 ℃ (A):
75
Gate Charge (nC):
360
EDA/CAD Models:
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Introducing the revolutionary product IXFR90N30, a game-changing N-Channel HiPerFET™ Standard series Power MOSFET that is perfect for a wide array of applications. This versatile MOSFET is designed for both hard switching and resonant mode applications, delivering exceptional performance with low gate charge and outstanding ruggedness. Additionally, it features a fast intrinsic diode, adding to its overall efficiency and reliability. The IXFR90N30 is available in various standard industrial packages, including isolated types, making it suitable for a range of industrial and commercial uses
Drain-Source Voltage (V) | 300 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.036 |
Continuous Drain Current @ 25 ℃ (A) | 75 | Gate Charge (nC) | 360 |
Input Capacitance, CISS (pF) | 10000 | Thermal resistance [junction-case] (K/W) | 0.3 |
Configuration | Single | Power Dissipation (W) | 417 |
Maximum Reverse Recovery (ns) | 250 | Replaced By Part Number | IXFR140N30P |
Sample Request | Yes | Check Stock | Yes |
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