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IXGN60N60 +BOM

Reliable performance and excellent thermal management capabilities make this transistor a top choice for demanding power electronic

IXGN60N60 General Description

IGBT Module PT Single 600 V 100 A 250 W Chassis Mount SOT-227B

ixgn60n60 ixgn60n60
ixgn60n60 ixgn60n60
ixgn60n60 ixgn60n60

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style SMD/SMT Configuration Single Dual Emitter
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Pd - Power Dissipation 250 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Continuous Collector Current 100 A Continuous Collector Current Ic Max 100 A
Gate-Emitter Leakage Current +/- 100 nA Height 9.6 mm
Length 38.23 mm Product Type IGBT Transistors
Factory Pack Quantity 10 Subcategory IGBTs
Width 25.42 mm Unit Weight 1.058219 oz

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More
L
L**n 09/08/2021

Got one n, another nd until put, like not soldering

11

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