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IXSN35N100U1 +BOM

35 Amps IGBT Transistors with 1000V Voltage

IXSN35N100U1 General Description

IGBT Module Single 1000 V 38 A 205 W Chassis Mount SOT-227B

ixsn35n100u1 ixsn35n100u1

Key Features

  • New generation of power modules
  • High efficiency and low loss performance
  • Operable up to 150°C
  • Pulse width modulation and DC-DC compatible
  • Suitable for industrial automation applications

Application

  • Enhanced power efficiency
  • Advanced control features
  • Reliable performance

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style SMD/SMT Configuration Single Dual Emitter
Collector- Emitter Voltage VCEO Max 1 kV Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Series IXSN35N100 Continuous Collector Current Ic Max 38 A
Height 9.6 mm Length 38.3 mm
Product Type IGBT Transistors Factory Pack Quantity 10
Subcategory IGBTs Width 25.07 mm
Unit Weight 1.058219 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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G
G**n 09/12/2020

Nothing has not yet come, i'm waiting for the 3rd month

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