This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXTA12N50P +BOM

TO-263AA MOSFETs ROHS

Manufacturer:

Ixys
Mfr.Part #:

IXTA12N50P
Datasheet:

IXTA12N50P Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for IXTA12N50P

Avaq Semiconductor offers the highly versatile and reliable IXTA12N50P driver, produced by Ixys. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IXTA12N50P.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	12 A
Rds On - Drain-Source Resistance	500 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5.5 V	Qg - Gate Charge	29 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	200 W	Channel Mode	Enhancement
Tradename	Polar	Series	IXTA12N50P
Configuration	Single	Fall Time	20 ns
Forward Transconductance - Min	7.5 S	Height	4.83 mm
Length	9.65 mm	Product Type	MOSFET
Rise Time	27 ns	Factory Pack Quantity	50
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	Polar Power MOSFET	Typical Turn-Off Delay Time	65 ns
Typical Turn-On Delay Time	22 ns	Width	10.41 mm
Unit Weight	0.056438 oz