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A MOSFET rated at 26.0 Amps and 200V, featuring an Rds value of 0.170
D2PAK-3 (TO-263-3)Manufacturer:
Mfr.Part #:
IXTA26P20P
Datasheet:
Drain-Source Voltage (V):
-200
Maximum On-Resistance @ 25 ℃ (Ohm):
0.17
Continuous Drain Current @ 25 ℃ (A):
-26
Gate Charge (nC):
56
EDA/CAD Models:
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Embedded within the IXTA26P20P Polar™ P-Channel MOSFET is our groundbreaking Polar technology, which delivers a significant reduction in both on-state resistance (RDSon) and gate charge (Qg) by 30% and 40% respectively compared to traditional alternatives. This enhanced performance leads to minimized conduction loss and superior switching characteristics, making it a standout choice for demanding applications. Moreover, these MOSFETs are ruggedly constructed to withstand dynamic dv/dt and avalanche scenarios, ensuring durability in harsh environments. The positive temperature coefficient of the on-state resistance facilitates easy paralleling for enhanced power handling capabilities
Drain-Source Voltage (V) | -200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.17 |
Continuous Drain Current @ 25 ℃ (A) | -26 | Gate Charge (nC) | 56 |
Input Capacitance, CISS (pF) | 2740 | Thermal resistance [junction-case] (K/W) | 0.42 |
Configuration | Single | Typical Reverse Recovery Time (ns) | 240 |
Power Dissipation (W) | 300 | Sample Request | Yes |
Check Stock | Yes |
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