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See Technical Specifications

IXTH50N25T +BOM

IXTH50N25T MOSFET Designed with Trench Gate Structure

Manufacturer:

Littelfuse
Mfr.Part #:

IXTH50N25T
Datasheet:

IXTH50N25T Datasheet (PDF)
Drain-Source Voltage (V):

250
Maximum On-Resistance @ 25 ℃ (Ohm):

0.06
Continuous Drain Current @ 25 ℃ (A):

50
Gate Charge (nC):

78
EDA/CAD Models:

Request Free CAD Models for IXTH50N25T

IXTH50N25T General Description

In the realm of electronics, the IXTH50N25T stands out as a reliable and efficient option for a variety of applications. Its superior performance characteristics, including low power dissipation and wide temperature tolerance, set it apart from other MOSFET options on the market. This makes it particularly well-suited for demanding environments where high reliability and efficiency are paramount

Key Features

Fast Response Time
Low Input Current
Safe Operating Area

Application

Fast switching speeds
Stable operation
Cost-effective solution

Specifications

Drain-Source Voltage (V)	250	Maximum On-Resistance @ 25 ℃ (Ohm)	0.06
Continuous Drain Current @ 25 ℃ (A)	50	Gate Charge (nC)	78
Input Capacitance, CISS (pF)	4000	Thermal resistance [junction-case] (K/W)	0.31
Configuration	Single	Typical Reverse Recovery Time (ns)	166
Power Dissipation (W)	400	Sample Request	No