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IXTN21N100 +BOM

Discrete semiconductor modules rated at 21 Amps and 100V, with a low Rds (on) value of 0.55 Ohm

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tel Tel: +852 95804164

IXTN21N100 General Description

N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B

Key Features

  • International standard packages
  • JEDECTO-264,epoxymeetUL94V-0 flammability classification
  • miniBLOC,(ISOTOP-compatible) with Aluminium nitride isolation
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Low package inductance

Specifications

Product Category Discrete Semiconductor Modules Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V Mounting Style Chassis Mount
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series IXTN21N100 Configuration Single
Fall Time 40 ns Height 9.6 mm
Id - Continuous Drain Current 21 A Length 38.23 mm
Number of Channels 1 Channel Pd - Power Dissipation 520 W
Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 550 mOhms
Rise Time 50 ns Factory Pack Quantity 10
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 30 ns
Vds - Drain-Source Breakdown Voltage 1 kV Width 25.42 mm
Unit Weight 1.058219 oz

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