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See Technical Specifications

IXTQ60N20T +BOM

Discrete MOSFET with a 60A and 200V rating in a TO3P package

Manufacturer:

Littelfuse
Mfr.Part #:

IXTQ60N20T
Datasheet:

IXTQ60N20T Datasheet (PDF)
Drain-Source Voltage (V):

200
Maximum On-Resistance @ 25 ℃ (Ohm):

0.04
Continuous Drain Current @ 25 ℃ (A):

60
Gate Charge (nC):

73
EDA/CAD Models:

Request Free CAD Models for IXTQ60N20T

IXTQ60N20T General Description

The IXTQ60N20T Trench Gate Power MOSFET is a top choice for low voltage and high current applications. Its incredibly low RDS(on) ensures minimal power dissipation, making it perfect for energy-efficient systems. With a wide operating junction temperature range of -40 °C to 175 °C, this MOSFET is versatile and reliable even in harsh environmental conditions. It is an excellent option for automotive applications and other demanding industries that require high performance and durability

Key Features

Pulse Withstand Capability
Reduced EMI Radiation
Simplified Circuit Design

Application

compact design
advanced technology
wide range of applications

Specifications

Drain-Source Voltage (V)	200	Maximum On-Resistance @ 25 ℃ (Ohm)	0.04
Continuous Drain Current @ 25 ℃ (A)	60	Gate Charge (nC)	73
Input Capacitance, CISS (pF)	4530	Thermal resistance [junction-case] (K/W)	0.3
Configuration	Single	Typical Reverse Recovery Time (ns)	118
Power Dissipation (W)	500	Sample Request	No
Check Stock	Yes