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IXYH50N120C3D1 +BOM
Transistor IGBT chip designed for high power applications, capable of handling 90A current at 1200V voltage
TO-247-3-
Manufacturer:
-
Mfr.Part #:
IXYH50N120C3D1
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Datasheet:
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Pin Count:
3
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Released Date:
Sep 6, 2022
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Last Modified Date:
Mar 7, 2023 4:10 PM UTC
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EDA/CAD Models:
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Availability: 4165 PCS
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IXYH50N120C3D1 General Description
The IXYH50N120C3D1 is a top-of-the-line high voltage insulated gate bipolar transistor (IGBT) module that delivers unrivaled performance in industrial settings. With a robust current rating of 50A and an impressive voltage rating of 1200V, this module is a powerhouse when it comes to handling high power requirements with efficiency and reliability
Key Features
- Optimized for 20kHz-60kHz switching
- Square RBSOA
- Short circuit capability
- Avalanche rated
- Ultra-fast anti-parallel diodes
- International standard packages
- Advantages:
- Hard-switching capability
- High power density
- Low gate drive requirements
Application
- Battery chargers
- E-Bikes
- Lamp ballasts
- Power inverters
- Power Factor Correction (PFC) circuits
- Switched-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Welding machines
Specifications
Pin Count | 3 | Released Date | Sep 6, 2022 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC |
Service Policies and Others
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 4,165
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $8.488 | $8.49 |
10+ | $8.115 | $81.15 |
30+ | $7.886 | $236.58 |
100+ | $7.696 | $769.60 |
The prices below are for reference only.
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