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See Technical Specifications

IXYT55N120A4HV +BOM

IGBT Transistors IGBT XPT GEN 4 1200V TO268HV

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXYT55N120A4HV
Datasheet:

IXYT55N120A4HV Datasheet (PDF)
IGBT Type:

PT
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

175 A
Current - Collector Pulsed (Icm):

350 A
EDA/CAD Models:

Request Free CAD Models for IXYT55N120A4HV

IXYT55N120A4HV General Description

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.

Key Features

Low on-state voltages Vcesat
Positive thermal coefficient of Vcesat
International standard packages

Application

Battery chargers
Lamp ballasts
Power inverters
Uninterruptible power supplies (UPS)
Welding machines
Advantages:
Ideal for high power density and high inrush currents, low loss applications
Hard-switching capable
Easy paralleling of devices
Reduced gate driver requirements
Ease of replacement and availability of isolation package

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	PT	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	175 A	Current - Collector Pulsed (Icm)	350 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 55A	Power - Max	650 W
Switching Energy	2.3mJ (on), 5.3mJ (off)	Input Type	Standard
Gate Charge	110 nC	Td (on/off) @ 25°C	23ns/300ns
Test Condition	600V, 40A, 5Ohm, 15V	Reverse Recovery Time (trr)	35 ns
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IXYT55	Pin Count	3
Released Date	Jun 15, 2022	Last Modified Date	Mar 7, 2023 4:10 PM UTC