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JANTX1N4150-1 +BOM

Diodes Designed for Power Management, Signal Handling, and Computer Applications up to 75V

Manufacturer:

Microchip Technology
Mfr.Part #:

JANTX1N4150-1
Datasheet:

JANTX1N4150-1 Datasheet (PDF)
Technology:

Standard
Voltage - DC Reverse (Vr) (Max):

50 V
Current - Average Rectified (Io):

200mA
Voltage - Forward (Vf) (Max) @ If:

1 V @ 200 mA
EDA/CAD Models:

Request Free CAD Models for JANTX1N4150-1

JANTX1N4150-1 General Description

When it comes to high reliability applications, the JANTX1N4150-1 semiconductor diode is the go-to choice for aerospace, military, and industrial systems where performance and durability are paramount. This small signal Schottky diode is capable of handling high frequency and fast switching operations, with a maximum repetitive peak reverse voltage of 40 volts and an average forward current of 175mA. Housed in a DO-35 glass case, it features a forward voltage drop of 0.4V at 1mA and a reverse leakage current of 0.5µA at 25°C, ensuring consistent and reliable performance in demanding environments. With a typical junction capacitance of 2pF and a maximum reverse recovery time of 4ns, this diode delivers the speed and efficiency required for critical applications. Manufactured using a hermetically sealed glass package, it provides protection against environmental contaminants, ensuring long-term reliability. For high reliability applications where performance and durability are critical, the JANTX1N4150-1 is the dependable choice that meets stringent requirements

Specifications

Technology	Standard	Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	200mA	Voltage - Forward (Vf) (Max) @ If	1 V @ 200 mA
Speed	Small Signal =< 200mA (Io), Any Speed	Reverse Recovery Time (trr)	4 ns
Current - Reverse Leakage @ Vr	100 nA @ 50 V	Grade	Military
Qualification	MIL-PRF-19500/231	Mounting Type	Through Hole
Operating Temperature - Junction	-65°C ~ 175°C	Base Product Number	1N4150