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Product JANTX2N2907A falls under the category of small-signal Bipolar Junction Transistors (BJTs)
TO-18-3Manufacturer:
Mfr.Part #:
JANTX2N2907A
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
PNP
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
60 V
EDA/CAD Models:
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The JANTX2N2907A transistor is an essential component in critical applications where reliability and performance are crucial. Its robust design allows it to withstand harsh environments and high levels of radiation, making it a top choice for military, aerospace, and space applications. With a maximum collector current rating of 800 mA and a maximum voltage rating of 60 volts, this transistor delivers high performance in low-power switching and amplification tasks. Its high gain and low saturation voltage further enhance its suitability for various electronic applications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 400 mV |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 500 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.081218 oz |
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