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JANTX2N3501 +BOM

JANTX2N3501 is a single element transistor suitable for various electronic applications requiring high reliability and performance

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JANTX2N3501 General Description

Bipolar (BJT) Transistor NPN 150 V 300 mA 1 W Through Hole TO-39

Key Features

  • JEDEC registered 2N3506 through 2N3507A series.
  • RoHS compliant versions available (commercial grade only).
  • VCR(sat) = 0.5 V @ IC = 500 mA.
  • Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
  • Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 16 Weeks Collector Current-Max (IC) 0.3 A
Collector-Emitter Voltage-Max 150 V Configuration SINGLE
DC Current Gain-Min (hFE) 20 JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 200 °C Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1 W Qualification Status Qualified
Reference Standard MIL-19500/366 Surface Mount NO
Terminal Finish TIN LEAD Terminal Form WIRE
Terminal Position BOTTOM Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz

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