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See Technical Specifications

JANTX2N6796 +BOM

N-Channel Silicon FET

Manufacturer:

Infineon
Mfr.Part #:

JANTX2N6796
Datasheet:

JANTX2N6796 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for JANTX2N6796

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JANTX2N6796 General Description

In summary, the JANTX2N6796 is a high-performance transistor that delivers reliability, durability, and efficiency in a compact package. Its robust design, combined with its impressive technical specifications, makes it an excellent choice for various industrial and commercial applications where ruggedness and reliability are crucial

Key Features

This product provides exceptional voltage rating and current handling
Meets or exceeds industry standards for quality and reliability
Suitable for a wide range of applications from industrial to residential use

Application

Rugged transistor for military electronics
Stable performance in power supplies
Robust voltage switching capabilities

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	207 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	28.51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	25 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	45 ns	Product Type	MOSFET
Rise Time	75 ns	Factory Pack Quantity	100
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	300 ns	Typical Turn-On Delay Time	30 ns
Unit Weight	0.229281 oz