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JANTX2N6798 +BOM
With a voltage rating of 200V, this single N-channel MOSFET guarantees reliable performance in high-reliability applications
TO-205AF-
Manufacturer:
Microsemi Corporation
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Mfr.Part #:
JANTX2N6798
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
200 V
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Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
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EDA/CAD Models:
Availability: 4995 PCS
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JANTX2N6798 General Description
Whether used in industrial equipment, automotive systems, or telecommunications devices, this power transistor provides consistent and robust operation. Its single-element design simplifies circuit layout and enhances overall system reliability. Trust the JANTX2N6798 for your power management needs, and experience efficient power delivery with minimal losses
Key Features
Low RDS(on)
Ease of Paralleling
Qualified to MIL-PRF-19500/557
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 42.07 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - | Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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In Stock: 4,995
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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The prices below are for reference only.
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