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See Technical Specifications

JS28F064M29EWLA +BOM

High Speed 4 Megabyte x 16 SLC NOR Flash Memory

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F064M29EWLA
Datasheet:

JS28F064M29EWLA Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

3A991.B.1.A
EDA/CAD Models:

Request Free CAD Models for JS28F064M29EWLA

JS28F064M29EWLA General Description

The JS28F064M29EWLA flash memory device by Intel offers a large 64 megabit capacity and a voltage range of 2.7V to 3.6V, making it a versatile and reliable option for various applications. With 128 blocks of 64 pages each, this device provides ample storage space for data-intensive operations. Its synchronous interface enables efficient read and write operations, including random access reads and burst mode programming. Additionally, advanced features like Erase Suspend/Resume capability and security lock ensure the safety and integrity of stored data. The device's fast access time and low power consumption make it an ideal choice for telecommunications, automotive, industrial, and consumer electronics applications

Key Features

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	3A991.B.1.A
HTS Code	8542.32.00.51	Access Time-Max	75 ns
Alternate Memory Width	8	Command User Interface	YES
Common Flash Interface	YES	Data Polling	YES
JESD-30 Code	R-PDSO-G56	JESD-609 Code	e3
Length	18.4 mm	Memory Density	67108864 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	128
Number of Terminals	56	Number of Words	4194304 words
Number of Words Code	4000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	4MX16	Page Size	8/16 words
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	3 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.2 mm
Sector Size	64K	Standby Current-Max	0.00012 A
Supply Current-Max	0.025 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING	Terminal Pitch	0.5 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	YES	Type	NOR TYPE
Width	14 mm