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See Technical Specifications

JS28F128M29EWHF +BOM

8MB flash memory module featuring a 16x16 organization, providing a fast 75ns access time in a PDSO56 package

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F128M29EWHF
Datasheet:

JS28F128M29EWHF Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for JS28F128M29EWHF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F128M29EWHF General Description

Boasting a common flash interface (CFI) for easy integration, the JS28F128M29EWHF offers a high level of data retention and endurance, with a guaranteed minimum of 20-year data retention. Additionally, it includes advanced features such as block locking and protection, as well as a flexible erase capability for added convenience and security

Key Features

Architecture
— Symmetrical 128-KB blocks
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
— Blank Check to verify an erased block
Performance
— Initial Access Speed: 75ns
— 25 ns 8-word Asynchronous page-mode
— 256-Word write buffer for x16 mode, 256-
Byte write buffer for x8 mode;
1.41 µs per Byte Effective programming
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP
— 64-Ball Easy BGA package
Security
— Enhanced security options for code
protection
— Absolute protection with VPEN = Vss
— Individual block locking
— Block erase/program lockout during power
transitions
— Password Access feature
— One-Time Programmable Register:
64 OTP bits, programmed with unique
information by Numonyx
64 OTP bits, available for customer
programming
Software
— Program and erase suspend support
— Numonyx® Flash Data Integrator (FDI)
— Common Flash Interface (CFI) Compatible
— Scalable Command Set
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 65 nm Flash Technology
— JESD47E Compliant

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	128Mbit	Memory Organization	16M x 8, 8M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	70ns	Access Time	70 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount