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K4B4G0846E-BYK0 +BOM
FBGA
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Manufacturer:
Samsung Electronics
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Mfr.Part #:
K4B4G0846E-BYK0
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Datasheet:
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ECCN (US):
EAR99
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HTS:
8542.32.00.36
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Automotive:
No
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PPAP:
No
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for K4B4G0846E-BYK0, guaranteed quotes back within 12hr.
Availability: 6256 PCS
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K4B4G0846E-BYK0 General Description
The K4B4G0846E-BYK0 is a specific model of electronic component known as a synchronous dynamic random-access memorymodule.
Key Features
- It is designed to operate at a speed of 1600 MHz (PC3-12800) and has a capacity of 4 gigabits (Gb).
- The module utilizes a Double Data Rate 3 (DDR3) interface and has a 5V power supply.
- It employs a x4 organization, which means it has four internal banks for efficient data storage and access.
Application
- The K4B4G0846E-BYK0 SDRAM module is commonly used in various electronic devices such as computers, laptops, and servers.
- It serves as a primary memory component, providing data storage and retrieval capabilities for running software applications, storing files, and more.
Specifications
ECCN (US) | EAR99 | Part Status | LTB |
HTS | 8542.32.00.36 | Automotive | No |
PPAP | No | DRAM Type | DDR3L SDRAM |
Chip Density (bit) | 4G | Organization | 512Mx8 |
Number of Internal Banks | 8 | Number of Words per Bank | 64M |
Number of Bits/Word (bit) | 8 | Data Bus Width (bit) | 8 |
Maximum Clock Rate (MHz) | 1600 | Maximum Access Time (ns) | 0.225 |
Address Bus Width (bit) | 19 | Minimum Operating Supply Voltage (V) | 1.283|1.425 |
Typical Operating Supply Voltage (V) | 1.35|1.5 | Maximum Operating Supply Voltage (V) | 1.45|1.575 |
Operating Current (mA) | 71 | Minimum Operating Temperature (°C) | 0 |
Maximum Operating Temperature (°C) | 95 | Supplier Temperature Grade | Commercial |
Number of I/O Lines (bit) | 8 | Mounting | Surface Mount |
PCB changed | 78 | Pin Count | 78 |
Lead Shape | Ball |
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In Stock: 6,256
Minimum Order: 1
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