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See Technical Specifications

K4E8E304EE-EGCE +BOM

Advanced Technology for Enhanced Visual Performanc

Manufacturer:

SAMSUNG
Mfr.Part #:

K4E8E304EE-EGCE
Datasheet:

K4E8E304EE-EGCE Datasheet (PDF)
Package/Case:

BGA
Product Type:

Memory ICs
EDA/CAD Models:

Request Free CAD Models for K4E8E304EE-EGCE

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Key Features

1. Internally frequency-compensated2. Large DC voltage gain: 100 dB3. Wide bandwidth (unity gain): 1.1 MHz (temperature compensated)4. Very low supply current per channel essentially independent of supply voltage5. Low input bias current: 20 nA (temperature compensated)6. Low input offset voltage: 2 mV7. Low input offset current: 2 nA8. Input common-mode voltage range includes negative rails

Application

Application areas include transducer amplifiers, DC gain blocks and all the conventional op-amp circuits, which can now be more easily implemented in single power supply systems. For example, these circuits can be directly supplied with the standard +5 V, which is used in logic systems and will easily provide the required interface electronics with no additional power supply.