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N-Channel Insulated Gate Bipolar Transistor with TO-247 packaging, designed for 100A collector current and 600V breakdown voltage
TO-247-3Manufacturer:
Kec Semicon
Mfr.Part #:
KGF50N60KDA
Datasheet:
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Collector Current-Max (IC):
100 A
Collector-Emitter Voltage-Max:
600 V
EDA/CAD Models:
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The KGF50N60KDA from Infineon Technologies is a top-of-the-line silicon carbide power MOSFET that boasts impressive specifications and performance capabilities. With a breakdown voltage of 600V and a continuous drain current of 50A, this MOSFET is well-suited for a wide range of high-power applications across various industries. Its low on-state resistance of 60mΩ ensures minimal power losses and maximum system efficiency, making it a popular choice for demanding electronic projects
Part Life Cycle Code | Active | ECCN Code | EAR99 |
Collector Current-Max (IC) | 100 A | Collector-Emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Polarity/Channel Type | N-CHANNEL |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 310 ns |
Turn-on Time-Nom (ton) | 110 ns |
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