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KSC5502DTM +BOM

NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High Efficiency Power Transfer
  • Low Current Noise
  • Small Quiescent Current
  • Low Capacitance to Ground

Application

  • Efficient and reliable product.
  • Suitable for multiple applications.
  • Convenient and saves time.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector- Base Voltage VCBO 1.2 kV
Emitter- Base Voltage VEBO 12 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 2 A Pd - Power Dissipation 87.83 W
Gain Bandwidth Product fT 11 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series KSC5502D
Continuous Collector Current 2 A DC Collector/Base Gain hfe Min 14
Height 2.3 mm Length 6.6 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2500
Subcategory Transistors Technology Si
Width 6.1 mm Unit Weight 0.009184 oz

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