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See Technical Specifications

KSP2907ATA +BOM

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3

Manufacturer:

onsemi
Mfr.Part #:

KSP2907ATA
Datasheet:

KSP2907ATA Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Models:

Request Free CAD Models for KSP2907ATA

KSP2907ATA General Description

Housed in a convenient TO-92 package, the KSP2907ATA is easy to use in different circuits. It offers low noise and high linearity, making it particularly well-suited for audio amplification and signal processing applications. Additionally, the transistor features a low saturation voltage, making it ideal for switching applications where a low voltage drop is desired

Key Features

Suitable for use in various applications including audio amplifiers, voltage regulators, and power management circuits
Housed in a SOT-23 package for easy integration into circuit designs
This transistor features high gain and low saturation voltage
Offers reliable performance with 600mA current and 625mW power

Application

Power management solutions
High-frequency amplifiers
Current rating applications

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	1.6 V
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Series	KSP2907A
Continuous Collector Current	- 600 mA	DC Current Gain hFE Max	300
Height	4.7 mm	Length	4.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	2000
Subcategory	Transistors	Technology	Si
Width	3.93 mm	Part # Aliases	KSP2907ATA_NL
Unit Weight	0.008466 oz