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See Technical Specifications

KSP45 +BOM

Bipolar Transistors - BJT NPN/400V/0.3A/50-200

Manufacturer:

onsemi
Mfr.Part #:

KSP45
Datasheet:

KSP45 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

350 V
EDA/CAD Models:

Request Free CAD Models for KSP45

Key Features

High-Gain Transistor
Low-Noise Amplifier
Silicon-Based Device
Advanced Power Module
Fast-Switching FET
High-Speed Driver IC

Application

Works for a variety of tasks.
Essential for everyday use.
Suitable for all occasions.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	350 V	Collector- Base Voltage VCBO	400 V
Emitter- Base Voltage VEBO	6 V	Maximum DC Collector Current	300 mA
Pd - Power Dissipation	625 mW	Maximum Operating Temperature	+ 150 C
Series	KSP4	Continuous Collector Current	300 mA
DC Collector/Base Gain hfe Min	50	DC Current Gain hFE Max	200
Height	4.58 mm	Length	4.58 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	3.86 mm
Unit Weight	0.008466 oz

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In Stock: 7,072

Minimum Order: 1

Qty.	Unit Price	Ext. Price
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KSP45

onsemi

Availability: 7,072 PCS

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