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MA4E2502H-1246 +BOM

Low-voltage, low-current Schottky Barrier Diode (SBD) suitable for various applications

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MA4E2502H-1246 General Description

RF Diode Schottky 5V 20 mA 50 mW Die

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Key Features

  • Extremely Low Parasitic Capacitance and Inductance
  • RoHS Compliant
  • Lower Susceptibility to ESD Damage
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)
  • Rugged HMIC Construction with Polyimide Scratch Protection
  • Surface Mountable in Microwavable Circuits, No Wirebonds Required
  • Aerospace and Defense
  • ISM
MACOM Technology Solutions Original Stock

Application

  • Tss: -53 dBm
  • Min Frequency: 0 MHz
  • Junction Capacitance: 0.12 pF
  • Total Capacitance: 0.12 pF
  • Vf: 0.65 V
  • Vb: 3 
  • Test Frequency: 10 GHz
  • Dynamic Resistance: 11 ohms
  • Max Frequency: 26,000 MHz

Specifications

Category Discrete Semiconductor ProductsDiodesRF Diodes Series -
Diode Type Schottky Voltage - Peak Reverse (Max) 5V
Current - Max 20 mA Capacitance @ Vr, F 0.12pF @ 0V, 18GHz
Resistance @ If, F - Power Dissipation (Max) 50 mW
Operating Temperature -40°C ~ 125°C (TJ) Base Product Number MA4E2502
Product Category Schottky Diodes & Rectifiers Product Schottky Diodes
Mounting Style SMD/SMT Configuration Single
Technology Si If - Forward Current 20 mA
Vrrm - Repetitive Reverse Voltage 5 V Vf - Forward Voltage 650 mV
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Pd - Power Dissipation 50 mW Product Type Schottky Diodes & Rectifiers
Factory Pack Quantity 100 Subcategory Diodes & Rectifiers
Vr - Reverse Voltage 5 V

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In Stock: 4,433

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $3.383 $3.38
200+ $1.310 $262.00
500+ $1.263 $631.50
1000+ $1.241 $1,241.00

The prices below are for reference only.

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