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See Technical Specifications

MC33174DR2G +BOM

14-Pin SOIC N T/R

Manufacturer:

ON
Mfr.Part #:

MC33174DR2G
Datasheet:

MC33174DR2G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

751A-03
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for MC33174DR2G

MC33174DR2G General Description

The MC33174DR2G is a top-notch monolithic op-amp that stands out for its quality bipolar fabrication and innovative design concepts. Operating at 180 A per amplifier, this device offers a gain bandwidth product of 1.8 MHz and a slew rate of 2.1 V/s, all without the need for JFET device technology. Suitable for single supply operation, it features a Darlington input stage that provides high input resistance, low input offset voltage, and high gain. The all NPN output stage ensures a large output voltage swing, high capacitance drive capability, and excellent phase and gain margins. With symmetrical source/sink AC frequency response and low open loop high frequency output impedance, the MC33174DR2G is a reliable choice for industrial and automotive applications

Key Features

Spectral Analysis Capability
Rapid Development Prototyping
Advanced Digital Signal Processing

Application

Highly adaptable op-amp
Perfect for instrumentation
Great for signal conditioning

Specifications

Status	Active	Compliance	PbAHP
Case Outline	751A-03	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	N
Rail to Rail	No	Channels	4
VS Min (V)	3	VS Max (V)	44
Iq Typ (mA)	0.88	VOS Max (mV)	4.5
GBW Typ (MHz)	1.8	SR Typ (V/µs)	2.1
IO Typ (mA)	5	ΔVOS/ΔT (μV/C)	10
eN (nV/√Hz)	32	Ibias Typ (pA)	20000
CMRR Typ (dB)	90	Architecture	Bipolar
Temperature Range (°C)	-40 to 85	Pricing ($/Unit)	$0.3085Sample