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MD2009DFX +BOM

Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF

MD2009DFX General Description

Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF

Key Features

State-of-the-art technology:

diffused collector enhanced generation

More stable performance versus operating

temperature variation

Low base drive requirement

Tighter hFE range at operating collector current

Fully insulated power package U.L. compliant

Integrated free wheeling diode

In compliance with the 2002/93/EC European

directive

Application

Horizontal deflection output for TV

Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Single
Transistor Polarity NPN Mounting Style Through Hole
DC Collector/Base Gain hfe Min 5 Collector- Emitter Voltage VCEO Max 700 V
Continuous Collector Current 10 A Peak DC Collector Current 16 A
Pd - Power Dissipation 58 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series MD2009DFX
Emitter- Base Voltage VEBO 7 V Height 16.5 mm
Length 15.7 mm Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 30 Subcategory Transistors
Width 5.7 mm Unit Weight 0.245577 oz

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