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IGBT Modules 600V 100A Dual
S-3Manufacturer:
Mfr.Part #:
MG06100S-BR1MM
Datasheet:
Configuration:
Half Bridge
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
150 A
Power - Max:
625 W
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IGBT Module Half Bridge 600 V 150 A 625 W Chassis Mount S3
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | Series | - |
IGBT Type | - | Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 150 A |
Power - Max | 625 W | Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 100A (Typ) |
Current - Collector Cutoff (Max) | 500 µA | Input Capacitance (Cies) @ Vce | 5.3 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Dual | Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.45 V | Continuous Collector Current at 25 C: | 125 A |
Gate-Emitter Leakage Current: | 400 nA | Pd - Power Dissipation: | 330 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Packaging: | Bulk | Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | Chassis Mount | Product Type: | IGBT Modules |
Series: | MG06100S | Factory Pack Quantity: | 50 |
Subcategory: | IGBTs | Technology: | Si |
Unit Weight: | 5.643834 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for MG06100S-BR1MM, guaranteed quotes back within
12hr.
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