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Power Transistor with Darlington configuration using Silicon NPN technology
TO-3Manufacturer:
Mfr.Part #:
MJ11028
Datasheet:
Configuration:
Single
Transistor Polarity:
NPN
Collector- Emitter Voltage VCEO Max:
60 V
Emitter- Base Voltage VEBO:
5 V
EDA/CAD Models:
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Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3)
Product Category: | Darlington Transistors | Configuration: | Single |
Transistor Polarity: | NPN | Collector- Emitter Voltage VCEO Max: | 60 V |
Emitter- Base Voltage VEBO: | 5 V | Collector- Base Voltage VCBO: | 60 V |
Maximum DC Collector Current: | 50 A | Pd - Power Dissipation: | 300 mW |
Mounting Style: | Through Hole | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Packaging: | Tray |
Continuous Collector Current: | 50 A | DC Collector/Base Gain hfe Min: | 400, 1000 |
Height: | 8.51 mm | Length: | 38.86 mm |
Product Type: | Darlington Transistors | Factory Pack Quantity: | 100 |
Subcategory: | Transistors | Width: | 26.67 mm |
Unit Weight: | 0.056438 oz | Pin Count | 4 |
Released Date | May 18, 2020 | Last Modified Date | Mar 7, 2023 4:10 PM UTC |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.027 | $5.03 |
10+ | $4.803 | $48.03 |
25+ | $4.666 | $116.65 |
100+ | $4.318 | $431.80 |
The prices below are for reference only.
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