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MJ11028 +BOM

Power Transistor with Darlington configuration using Silicon NPN technology

MJ11028 General Description

Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3)

mj11028 mj11028

Key Features

  • Fast Rise Time - tR = 5 ns (Typ)
  • High Peak Current Capability up to 100 A
  • Silicon Pin Diode with Low Reverse Recovery Charge
  • Pulse Width Modulation Compatible with High Frequency and Low Distortion
  • Wide Operating Temperature Range - TJ to +120°C
  • Rugged Construction for High Reliability in Harsh Environments

Specifications

Product Category: Darlington Transistors Configuration: Single
Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 60 V
Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 50 A Pd - Power Dissipation: 300 mW
Mounting Style: Through Hole Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Packaging: Tray
Continuous Collector Current: 50 A DC Collector/Base Gain hfe Min: 400, 1000
Height: 8.51 mm Length: 38.86 mm
Product Type: Darlington Transistors Factory Pack Quantity: 100
Subcategory: Transistors Width: 26.67 mm
Unit Weight: 0.056438 oz Pin Count 4
Released Date May 18, 2020 Last Modified Date Mar 7, 2023 4:10 PM UTC

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Ratings and Reviews

More
H
H**r 01/10/2024

The goods came on time. The seller is polite. Diodes look good. Connect sign off

18
M
M**k 12/21/2021

Put in the power supply for the computer. Everything works.

6
D
D**o 10/12/2021

OK good goods straight as Pic

5
E
E**y 07/20/2020

Item arrived fast as described!!

15

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MJ11028 Datasheet PDF

Preliminary Specification MJ11028 PDF Download

MJ11028 PDF Preview