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See Technical Specifications

MMBTH10-4LT1G +BOM

NPN Bipolar Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMBTH10-4LT1G
Datasheet:

MMBTH10-4LT1G Datasheet (PDF)
Case Outline:

318-08
MSL Temp (°C):

260
Container Type:

REEL
EDA/CAD Models:

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MMBTH10-4LT1G General Description

The MMBTH10-4LT1G is a NPN bipolar transistor designed for high-frequency applications with a transition frequency of 800MHz. It has a maximum collector-emitter voltage of 25V and a power dissipation of 225mW, making it suitable for low-power amplification and switching. With a continuous collector current of 1mA, this transistor is ideal for use in small signal amplification and general purpose switching circuits. It is available in a full reel packaging and is RoHS compliant, ensuring its environmental friendliness

Key Features

Faster Switching Time Enhances System Responsiveness
Silicon-Based Devices Offer Low Power Consumption
Efficient Heat Dissipation Reduces Cooling Needs
Robust Design Ensures Device Durability in Harsh Environments

Specifications

Status	Active	Case Outline	318-08
MSL Temp (°C)	260	Container Type	REEL

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Ratings and Reviews

B**n 01/11/2024

Great company!John is a very professional man.

M**n 12/19/2022

A good designer, but my kid did something wrong, and he work, he can still fix with the teacher. For training a very good thing. prod did everything perfectly, sent quickly, got in a month, without a track naturally.

M**l 11/07/2021

Great. Thank you. Delivery about month.