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See Technical Specifications

MOC8204SR2M +BOM

Transistor-coupled optoelectronic device

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

MOC8204SR2M
Datasheet:

MOC8204SR2M Datasheet (PDF)
Number Of Channels:

1
Voltage - Isolation:

4170Vrms
Current Transfer Ratio (Min):

20% @ 10mA
Turn On / Turn Off Time (Typ):

5µs, 5µs
EDA/CAD Models:

Request Free CAD Models for MOC8204SR2M

MOC8204SR2M General Description

The MOC8204SR2M by Vishay Semiconductor is a versatile optoelectronic device designed for high-speed performance in a compact package. With its gallium arsenide infrared emitting diode and silicon photodarlington detector, this optocoupler offers a transfer ratio ranging from 100% to 600%, making it suitable for a wide range of applications. Its maximum forward current of 60mA ensures reliable operation, while its high isolation voltage of 5300Vrms provides added safety in various circuit configurations

Key Features

MOC8xxx optocouplers provide high-speed, high-voltage isolation
GaAs infrared LED and silicon phototransistor in a single DIP-6 package
High noise immunity and electrical isolation for reliable operation

Application

Versatile solutions

Specifications

Number of Channels	1	Voltage - Isolation	4170Vrms
Current Transfer Ratio (Min)	20% @ 10mA	Turn On / Turn Off Time (Typ)	5µs, 5µs
Input Type	DC	Output Type	Transistor with Base
Voltage - Output (Max)	400V	Current - Output / Channel	100mA
Voltage - Forward (Vf) (Typ)	1.15V	Current - DC Forward (If) (Max)	80 mA
Vce Saturation (Max)	400mV	Operating Temperature	-40°C ~ 100°C
Mounting Type	Surface Mount