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High-speed non-volatile memory with low power consumption
TSOPManufacturer:
Mfr.Part #:
MR2A16AYS35
Datasheet:
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
4Mbit
EDA/CAD Models:
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MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2
Category | Integrated Circuits (ICs)MemoryMemory | Series | - |
Memory Type | Non-Volatile | Memory Format | RAM |
Technology | MRAM (Magnetoresistive RAM) | Memory Size | 4Mbit |
Memory Organization | 256K x 16 | Memory Interface | Parallel |
Write Cycle Time - Word, Page | 35ns | Access Time | 35 ns |
Voltage - Supply | 3V ~ 3.6V | Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount | Base Product Number | MR2A16 |
feature-organization | 256Kx16 | feature-maximum-access-time-ns | 35 |
feature-minimum-operating-supply-voltage-v | 3 | feature-maximum-operating-supply-voltage-v | 3.6 |
feature-process-technology | 0.18um | feature-maximum-operating-current-ma | 155 |
feature-packaging | Tray | feature-pin-count | 44 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
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The parcel reached in 45 days, the attachment corresponds to the description, the purchase is satisfied.