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High-frequency amplifier for wireless communication systems with high power gain and low noise figur
221-11-3Manufacturer:
Mfr.Part #:
MRF174
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
13 A
Vds - Drain-Source Breakdown Voltage:
65 V
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RF Mosfet 28 V 2 A 150MHz 11.8dB 125W 211-11, Style 2
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 13 A |
Vds - Drain-Source Breakdown Voltage | 65 V | Rds On - Drain-Source Resistance | 2.5 mOhms |
Operating Frequency | 200 MHz | Gain | 11.8 dB |
Output Power | 125 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Mounting Style | SMD/SMT |
Configuration | Single | Pd - Power Dissipation | 270 W |
Product Type | RF MOSFET Transistors | Factory Pack Quantity | 10 |
Subcategory | MOSFETs | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 40 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
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