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MRF372 +BOM

RF Power Field-Effect Transistor

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRF372

  • Datasheet:

    MRF372 Datasheet (PDF) pdf-icon

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

MRF372 General Description

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-860C3, CASE 375G-04, 4 PIN

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 68 V
Drain Current-Max (ID) 17 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-CDFM-F4
Number of Elements 1 Number of Terminals 4
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 200 °C
Polarity/Channel Type N-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Form FLAT
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON

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