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MT47H64M16HR-3IT:H +BOM
ROHS-compliant, PBGA84 package for reliable use
84-TFBGA-
Manufacturer:
Micron Technology Inc.
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Mfr.Part #:
MT47H64M16HR-3IT:H
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Datasheet:
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Programmabe:
Not Verified
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Memory Type:
Volatile
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Memory Format:
DRAM
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Technology:
SDRAM - DDR2
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for MT47H64M16HR-3IT:H, guaranteed quotes back within 12hr.
Availability: 6268 PCS
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MT47H64M16HR-3IT:H General Description
The MT47H64M16HR-3 IT:H memory chip from Micron Technology is a reliable and high-performance option for industrial applications. With a capacity of 1GB, this DDR3 SDRAM chip operates at 1.5V and offers a speed of 800MHz. Its compact size makes it versatile for use in various electronic devices, providing efficient and effective memory solutions for a range of needs
Key Features
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible)
- Differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture
- Duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL)
- Posted CAS additive latency (AL)
- WRITE latency = READ latency - 1 tCK
- Selectable burst lengths (BL): 4 or 8
- Adjustable data-output drive strength
- 64ms, 8192-cycle refresh
- On-die termination (ODT)
- Industrial temperature (IT) option
- Automotive temperature (AT) option
- RoHS-compliant
- Supports JEDEC clock jitter specification
Specifications
Programmabe | Not Verified | Memory Type | Volatile |
Memory Format | DRAM | Technology | SDRAM - DDR2 |
Memory Size | 1Gbit | Memory Organization | 64M x 16 |
Memory Interface | Parallel | Clock Frequency | 333 MHz |
Write Cycle Time - Word, Page | 15ns | Access Time | 450 ps |
Voltage - Supply | 1.7V ~ 1.9V | Operating Temperature | -40°C ~ 95°C (TC) |
Mounting Type | Surface Mount | Base Product Number | MT47H64M16 |
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In Stock: 6,268
Minimum Order: 1
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The prices below are for reference only.