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Power Field-Effect Transistor, 55A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
2PINCANManufacturer:
Mfr.Part #:
MTM55N10
Datasheet:
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
HTS Code:
8541.29.00.95
Case Connection:
DRAIN
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Power Field-Effect Transistor, 55A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
Part Life Cycle Code | Obsolete | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 55 A |
Drain-source On Resistance-Max | 0.04 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 1000 pF | JEDEC-95 Code | TO-204AE |
JESD-30 Code | O-MBFM-P2 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 250 W |
Power Dissipation-Max (Abs) | 250 W | Pulsed Drain Current-Max (IDM) | 275 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN LEAD | Terminal Form | PIN/PEG |
Terminal Position | BOTTOM | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 750 ns |
Turn-on Time-Max (ton) | 420 ns |
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