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NE3210S01-T1B +BOM

NE3210S01-T1B: A cutting-edge Trans JFET utilizing AlGaAs HJFET technology

Manufacturer:

Cel
Mfr.Part #:

NE3210S01-T1B
Datasheet:

NE3210S01-T1B Datasheet (PDF)
Transistor Type:

HFET
Technology:

GaAs
Operating Frequency:

12 GHz
Gain:

13.5 dB

NE3210S01-T1B General Description

Engineers and designers can trust the NE3210S01-T1B to meet their requirements for small signal amplification with low noise and high linearity. Its N-Channel configuration ensures compatibility with a wide range of circuit designs for seamless integration

Key Features

SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
GATE LENGTH: LG ≤ 0.20 μm
GATE WIDTH: WG = 160 μm

Specifications

Product Category	RF JFET Transistors	Transistor Type	HFET
Technology	GaAs	Operating Frequency	12 GHz
Gain	13.5 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	4 V	Vgs - Gate-Source Breakdown Voltage	- 3 V
Id - Continuous Drain Current	70 mA	Maximum Operating Temperature	+ 125 C
Pd - Power Dissipation	165 mW	Mounting Style	SMD/SMT
Forward Transconductance - Min	55 mS	NF - Noise Figure	0.35 dB
Product	RF JFET	Product Type	RF JFET Transistors
Factory Pack Quantity	4000	Subcategory	Transistors
Type	GaAs HFET