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NE5517DR2G +BOM

High-gain amplifier for precision signal processing

NE5517DR2G General Description

The NE5517DR2G is a highly versatile and efficient product that incorporates two current-controlled transconductance amplifiers, each equipped with a differential input and push-pull output. Its innovative design provides a significant advantage over similar devices, making it ideal for a wide range of programmable gain applications. By utilizing linearizing diodes at the inputs, the NE5517DR2G achieves a remarkable 10 dB signal-to-noise improvement at 0.5% THD, enhancing overall circuit performance

ON Semiconductor, LLC Inventory

Key Features

  • High-Voltage IGBT Gate Drive
  • Dual Low-Side Current Sensing
  • Safety Feature with Auto Shut Down
  • Compact and Robust Design
ON Semiconductor, LLC Original Stock

Application

  • Power Converters
  • Amplifier Circuits
  • Frequency Modulators
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 751B-05
MSL Temp (°C) 260 Container Type REEL

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NE5517DR2G Datasheet PDF

Preliminary Specification NE5517DR2G PDF Download

NE5517DR2G PDF Preview

In Stock: 6,453

Minimum Order: 1

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