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See Technical Specifications

NJVMJD45H11T4G +BOM

8 A, 80 V PNP Power Bipolar Junction Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJVMJD45H11T4G
Datasheet:

NJVMJD45H11T4G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

PNP
Current - Collector (Ic) (Max):

8 A
Voltage - Collector Emitter Breakdown (Max):

80 V
EDA/CAD Models:

Request Free CAD Models for NJVMJD45H11T4G

NJVMJD45H11T4G General Description

When it comes to power transistors, the NJVMJD45H11T4G is a standout choice. Its bipolar junction design makes it perfect for a variety of tasks, including power and switching output in electronic devices. Additionally, its ability to serve as a driver stage makes it an indispensable component for applications like switching regulators, converters, and power amplifiers. The NJVMJD45H11T4G is engineered for reliability and high performance, providing designers and engineers with a durable and efficient solution for their electronic needs

Key Features

NJV Prefix for Automotive Applications with Unique Site Control, Pb-Free RoHS Compliance, and Fast Switching Speeds
AEC-Q101 Qualified for Special Site Control, Environmental Safety, and Compliance in Automotive and Industrial Applications
Pb-Free and RoHS Compliant for Environmental Safety and Compliance in Automotive, Industrial, and Medical Applications
Straight Lead Version in 16 mm Tape and Reel for Surface Mount Application in Automotive, Industrial, Medical, and Aerospace Applications
Complementary Pairs Simplifying Designs and Reducing Complexity in High-Speed Digital Circuits, Communication Systems, and Aerospace Applications
AEC-Q101 Qualified with Unique Site Control, Environmental Safety, and Compliance for Automotive, Industrial, and Medical Applications

Application

Improved volume control
Stronger audio signal

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	PNP	Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	1µA	DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V
Power - Max	1.75 W	Frequency - Transition	90MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NJVMJD45